UMWMalaysia
MOSFET N-CH 20V 1.2A SOT-23
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View full reportTechnical parameters
| Power | |
|---|---|
| Continuous Drain Current, $V_{GS}$ @ 4.5V | 1.2 A |
| Drain-Source Breakdown Voltage | 20 V (Min) |
| Gate Threshold Voltage | 0.7 V (Min) |
| Power Dissipation | 540 mW |
| Environment and package | |
| Junction and Storage Temperature Range | -55 to 150 °C |
| Package | SOT-23 |
| Other | |
| Static Drain-to-Source On-Resistance | 145 mΩ (Max) |
| Total Gate Charge | 2.6 nC (Typ) |