IRLL110

Transistors - FETs, MOSFETs - SingleSOT-223

MOSFET N-CH 100V 1.5A SOT-223

IRLL110 is an N-channel logic-level HEXFET power MOSFET from International Rectifier, with 100V breakdown voltage, 1.5A continuous drain current, 0.54Ω max on-resistance, in SOT-223 package, supporting fast switching and repetitive avalanche.Checked against the datasheet

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Technical parameters

Key specs

ChannelN-channel

Drain-source voltage100 VVGS = 0V，ID = 250μA

Continuous drain current1.5 ATc = 25°C，VGS = 5.0 V

On-resistance540 mΩMax · VGS = 5.0V，ID = 0.90A，VGS = 4.0V，ID = 0.75A

Gate threshold voltage2 VMax · VDS = VGS，ID = 250μA

Datasheet-verified parameters

25 items

Parameter	Value and test conditions	Source
Channel	N-Channel
Drain-to-Source Breakdown Voltage	Min 100 V, VGS = 0V, ID = 250μA
Continuous Drain Current	Max 1.5 A @ Tc = 25°C, VGS = 5.0 V
Static Drain-to-Source On-Resistance	Max 0.54 Ω @ VGS = 5.0V, ID = 0.90A; Max 0.76 Ω @ VGS = 4.0V, ID = 0.75A
Gate Threshold Voltage	Min 1.0 V, Max 2.0 V @ VDS = VGS, ID = 250μA
Package	SOT-223
Junction and Storage Temperature Range	-55 to +150 °C
Pulsed Drain Current	Max 12 A
Power Dissipation	Max 3.1 W @ Tc = 25°C
Gate-to-Source Voltage	Max -/+10 V
Single Pulse Avalanche Energy	Max 50 mJ
Avalanche Current	Max 1.5 A
Repetitive Avalanche Energy	Max 0.31 mJ
Peak Diode Recovery dv/dt	Max 5.5 V/ns
Junction-to-PCB Thermal Resistance	Max 40 °C/W
Junction-to-Ambient Thermal Resistance	Max 60 °C/W (PCB Mount)
Forward Transconductance	Min 0.57 S @ VDS = 25V, ID = 0.90 A
Drain-to-Source Leakage Current	Max 25 μA @ VDS = 100V, VGS = 0V; Max 250 μA @ VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage	Max 100 nA @ VGS = 10V
Total Gate Charge	Max 6.1 nC @ ID = 5.6A
Input Capacitance	Typ 250 pF @ VGS = 0V
Output Capacitance	Typ 80 pF @ VDS = 25V
Reverse Transfer Capacitance	Typ 15 pF @ f = 1.0MHz
Turn-On Delay Time	Typ 9.3 ns @ VDD = 50V
Turn-Off Delay Time	Typ 16 ns @ RG = 12Ω

All parameters (7)ExpandCollapse

Environment and package
Package	SOT-223
Other
I_{D} @ Tc = 25°C	1.5 A (Max)
P_{D} @Tc = 25°C	3.1 W (Max)
R_{DS(on)}	0.54 Ω (Max)
T_{J}, T_{STG}	-55 to +150 °C
V_{DSS}	100V
V_{GS(th)}	1.0 V (Min)

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DatasheetDatasheet · 220.0 KB · 2026-11-09

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