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Technical parameters

Datasheet-verified parameters

24 items
ParameterValue and test conditionsSource
PackageTO-247AC
Operating Junction and Storage Temperature Range-55 to +150 °C
GradeIndustrial
RoHSLead-Free (PbF)
Collector-to-Emitter VoltageMax. 600 V
Continuous Collector CurrentMax. 75 A @ T_C = 25°C; Max. 45 A @ T_C = 100°C
Pulse Collector CurrentMax. 150 A
Diode Continuous Forward CurrentMax. 40 A @ T_C = 25°C; Max. 15 A @ T_C = 100°C
Gate-to-Emitter VoltageMax. ±20 V
Maximum Power DissipationMax. 390 W @ T_C = 25°C; Max. 156 W @ T_C = 100°C
Collector-to-Emitter Breakdown VoltageMin. 600 V @ V_GE=0V, I_C=500μA
Collector-to-Emitter Saturation VoltageTyp. 2.00 V, Max. 2.35 V @ I_C=33A, V_GE=15V, T_J=25°C
Gate Threshold VoltageMin. 3.0 V, Typ. 4.0 V, Max. 5.0 V @ I_C=250μA
Collector-to-Emitter Leakage CurrentTyp. 5.0 μA, Max. 500 μA @ V_GE=0V, V_CE=600V, T_J=25°C
Diode Forward Voltage DropTyp. 1.30 V, Max. 1.70 V @ I_F=15A, V_GE=0V, T_J=25°C
Total Gate Charge (turn-on)Typ. 205 nC, Max. 308 nC @ I_C=33A, V_CC=400V, V_GE=15V
Turn-On Switching LossTyp. 255 μJ, Max. 305 μJ @ I_C=33A, V_CC=390V, V_GE=+15V, R_G=3.3Ω, L=200μH, T_J=25°C
Turn-Off Switching LossTyp. 375 μJ, Max. 445 μJ @ I_C=33A, V_CC=390V, V_GE=+15V, R_G=3.3Ω, L=200μH, T_J=25°C
Input CapacitanceTyp. 3648 pF @ V_GE=0V, V_CC=30V, f=1MHz
Output CapacitanceTyp. 322 pF @ V_GE=0V, V_CC=30V, f=1MHz
Diode Reverse Recovery TimeTyp. 42 ns, Max. 60 ns @ T_J=25°C, I_F=15A, V_R=200V, di/dt=200A/μs
Thermal Resistance Junction-to-Case-(each IGBT)Max. 0.32 °C/W
Thermal Resistance Junction-to-Case-(each Diode)Max. 1.7 °C/W
Internal Gate ResistanceTyp. 1.7 Ω @ 1MHz, Open Collector
All parameters (8)ExpandCollapse
Environment and package
PackageTO-247AC
Other
I(C) @ T(C) = 100°C45 A (Max)
I(C) @ T(C) = 25°C75 A (Max)
P(D) @ T(C) = 25°C390 W (Max)
R(CE(on))61 mΩ (Typ)
T(J) T(STG)-55 to +150 °C
V(CE(on))2.00 V (Typ)
V(CES)600 V (Max)

Pinout and package

PackageTO-247AC

PinNameFunctionSource
1T(Tab/Collector)
2G(Gate)
3E(Emitter)

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