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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current5.1 ~ 8 A8.0 A (TC = 25 °C,VGS = 10 V),5.1 A (TC = 100 °C,VGS = 10 V)
On-resistance850 mΩMax · 0.85 Ω (VGS = 10 V)

Datasheet-verified parameters

20 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-Source Voltage500 V
Continuous Drain Current8.0 A (TC = 25 °C, VGS = 10 V); 5.1 A (TC = 100 °C, VGS = 10 V)
On-Resistance0.85 Ω (VGS = 10 V)
PackageD2PAK (TO-263)
Operating Junction and Storage Temperature Range-55 to +150 °C
RoHS ComplianceRoHS-compliant (Lead (Pb)-free and Halogen-free: SiHF840S-GE3)
Halogen-freeHalogen-free (SiHF840S-GE3)
Gate-Source Voltage± 20 V
Pulsed Drain Current32 A
Maximum Power Dissipation125 W (TC = 25 °C); 3.1 W (TA = 25 °C, PCB mount)
Single Pulse Avalanche Energy510 mJ
Repetitive Avalanche Energy13 mJ
Peak Diode Recovery dV/dt3.5 V/ns
Total Gate Charge63 nC (max)
Gate-Source Charge9.3 nC
Gate-Drain Charge32 nC
ConfigurationSingle
Linear Derating Factor1.0 W/°C
Soldering Recommendations (Peak temperature)300 °C (For 10 s)
All parameters (8)ExpandCollapse
Power
Continuous Drain Current8.0 A (TC = 25 °C)
Drain-Source Voltage500 V
Gate-Source Threshold Voltage2.0 V (Min) to 4.0 V (Max)
Maximum Power Dissipation125 W (TC = 25 °C)
Environment and package
Operating Junction and Storage Temperature Range-55 to +150 °C
PackageD2PAK (TO-263)
Other
Drain-Source On-State Resistance0.85 Ω (Max)
Total Gate Charge63 nC (Max)

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.