Infineon TechnologiesGermany
MOSFET 2N-CH 30V 9.7A 8SO
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Technical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.7A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 2W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Other | |
| Base Product Number | IRF8313 |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Mfr | Infineon Technologies |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 9.7A, 10V |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |