IRF8313
Infineon TechnologiesGermany

IRF8313

ObsoleteSingle FETs, MOSFETs

IRF8313 is a N-channel power MOSFETs with VDS max: 30 V, RDS (on) max: 15.5 mOhm, Package: SO-8, Technology: Trench Mosfet, ID max: 9.7 A

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Technical parameters

Environment and package
Moisture Sensitivity Level1
PackageSO-8
Other
ID (@ TA=25°C) max9.7 A, 9.7 A
ID (@ TA=70°C) max8.1 A, 8.1 A
PolarityN+N, N+N
Ptot (@ TA=25°C) max2 W
QG6 nC
Qgd (typ)2.2 nC
RDS (on) (@10V) max15.5 mΩ
RDS (on) (@4.5V) max21.6 mΩ
RDS (on) max15.5 mΩ
RthJA max62.5 K/W
Tj max175 °C
VDS max30 V
VGS max20 V

Documents

DatasheetDatasheet · 263.3 KB · 2026-09-23Application NoteApplication Note · 2.0 MB · 2026-09-23Quality & ReliabilityQuality & Reliability · 109.9 KB · 2026-09-23
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