VBsemi(微碧半导体)China
IRF831-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO220；N—Channel沟道；600V；8A；RDS(ON)=780(mΩ)@VGS=10V；VGS=±30V；Vth=3.5V；采用Planar技术；
All alternatives
View full reportTechnical parameters
No technical parameters are available for this part.
Documents
No documents are linked to this part yet.