International RectifierUnited States
IC MOSFET N-CH 30V 20A SOIC-8
30V N-channel HEXFET Power MOSFET in SO-8 package, 20A continuous drain current, 4.0mΩ max on-resistance, industrial grade, RoHS and Halogen-Free compliant.Checked against the datasheet
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current20 ATA = 25°C，VGS = 10V
On-resistance4 mΩMax · VGS = 10V
Datasheet-verified parameters
16 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Channel | N-Channel | |
| Drain-to-Source Voltage | Max 30 V | |
| Continuous Drain Current | Max 20 A @ TA = 25°C, VGS = 10V | |
| On-Resistance | Max 4.0 mΩ @ VGS = 10V | |
| Package | SO-8 | |
| Operating Junction and Storage Temperature Range | -55 to +155 °C |
All parameters (6)
| Environment and package | |
|---|---|
| Package Type | SO-8 |
| Other | |
| ID (@ TA =25°C) | 20 A |
| Qg (typical) | 34 nC |
| RDS(on) max (@ VGS =10V) | 4.0 mΩ |
| TJ | -55 to +155 °C |
| VDS | 30 V |
Pinout and package
PackageSO-8
| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Source | ||
| 2 | Source | ||
| 3 | Source | ||
| 4 | Gate | ||
| 5 | Drain | ||
| 6 | Drain | ||
| 7 | Drain | ||
| 8 | Drain |
Documents
Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.