Infineon TechnologiesGermany
MOSFET N-CH 30V 20A 8-SOIC
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current20 A
On-resistance4 mΩMax · 20A
Gate threshold voltage2.32 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.32V @ 250µA |