All alternatives

View full report

4 alternatives on file. Sign in to view them.

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current33 ~ 200 A
On-resistance1.5 mΩMax · 120A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C33A (Ta), 200A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.3W (Ta), 125W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageBulk
Package / CaseDirectFET™ Isometric L8
Supplier Device PackageDirectFET™ Isometric L8
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12320 pF @ 25 V
MfrInternational Rectifier
Product StatusActive
Rds On (Max) @ Id, Vgs1.5mOhm @ 120A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents