All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 10A |
| Id-额定电流 | 10A |
| VDSS-最大漏源电压 | 30V |
| Vgs(th)-门槛电压 | 2.04V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 20mΩ |
| Ron-最大导通阻抗 | 20mΩ |
| Environment and package | |
| 封装类型1 | SO |
| Other | |
| Qg-栅极电荷 | 61nC |
| Vdss-漏源耐压 | 30V |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 8 |
| 集成ESD保护二极管 | 0 |
| 集成整流二极管 | 0 |
Documents
DatasheetDatasheet · 229.1 KB · 2026-09-22DatasheetDatasheet · 228.5 KB · 2026-09-22Application NoteApplication Note · 2.0 MB · 2026-09-22Catalog & SelectionCatalog & Selection · 1.7 MB · 2026-09-22Catalog & SelectionCatalog & Selection · 1.5 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 115.7 KB · 2026-09-22
Open document center