IRF540Z
Infineon TechnologiesGermany

IRF540Z

ObsoleteTransistors - FETs, MOSFETs - SingleTO-220AB

MOSFET N-CH 100V 36A TO220AB

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

17 alternatives on file. Sign in to view them.

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current36 A
On-resistance26.5 mΩMax · 22A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)92W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 25 V
MfrInfineon Technologies
Product StatusObsolete
Rds On (Max) @ Id, Vgs26.5mOhm @ 22A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents

DatasheetDatasheet · 383.5 KB · 2026-09-21Application NoteApplication Note · 2.0 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 663.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 115.7 KB · 2026-09-22EnvironmentalEnvironmental · 99.7 KB · 2026-09-22OtherOther · 27.2 KB · 2026-09-21OtherOther · 27.2 KB · 2026-09-21
Open document center