Infineon TechnologiesGermany
IRF540N is a N-channel power MOSFETs with VDS max: 100 V, RDS (on) max: 44 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 33 A
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Technical parameters
Key specs
Gate threshold voltage3 VMax
| Environment and package | |
|---|---|
| Mounting | THT |
| Operating Temperature range | -55 °C to 175 °C |
| Package | TO-220 |
| Other | |
| ID (@25°C) max | 33 A |
| Polarity | N |
| Ptot max | 140 W |
| Qgd | 14 nC |
| QG (typ @10V) | 47.3 nC |
| RDS (on) (@10V) max | 44 mΩ |
| RthJC max | 1.1 K/W |
| Tj max | 175 °C |
| VDS max | 100 V |
| VGS max | 20 V |
| VGS(th) | 3 V |
| VGS(th) range | 2 V to 4 V |