Fairchild SemiconductorUnited States
IC MOSFET N-CH 100V 27A TO-220
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Technical parameters
| Power | |
|---|---|
| Drain CurrentContinuous (T_C= 25°C, V_GS = 10V) (Figure 2) I_D | 33 A |
| Drain to Source Voltage (Note 1) V_DSS | 100 V |
| Gate to Source Threshold Voltage V_GS(TH) | 2 V (Min) |
| Power Dissipation P_D | 120 W |
| Environment and package | |
| Operating and Storage Temperature T_J, T_STG | -55 to 175 °C |
| PACKAGE | TO-220AB |
| Other | |
| Drain to Source On Resistance r_DS(ON) | 0.040 Ω (Max) |