Rohm SemiconductorJapan
TRANS PREBIAS DUAL PNP SMT6
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 300mW |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SMT6 |
| Other | |
| Base Product Number | IMB1AT110 |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |