Infineon TechnologiesGermany
DIODE SIL CARB 650V 2A TO263-2
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View full reportTechnical parameters
Key specs
Reverse voltage650 V
Average rectified current2 A
Forward voltage1.8 VMax · 2 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 330 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Bulk |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-2 |
| Other | |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | CoolSiC™+ |
| Speed | No Recovery Time > 500mA (Io) |
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