Infineon TechnologiesGermany
DIODE GP 1.2KV 25A WAFER
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View full reportTechnical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current25 A
Forward voltage2.05 VMax · 25 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 25A |
| Current - Reverse Leakage @ Vr | 5.2 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.05 V @ 25 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -40°C~175°C |
| Package | Bulk |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Other | |
| Base Product Number | IDC15D120 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |