ICPL-101X

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The ICPL-101X series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic LSOP4 package. With the robust coplanar double mold structure, ICPL-101X series provide the most stable isolation feature.

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Technical parameters

Power
Collector Current	I C \| 50 \| mA
Collector - Emitter Voltage	V CEO \| 80 \| V
Emitter - Collector Voltage	V ECO \| 7 \| V
Forward Current	I F \| 60 \| mA
Input Power Dissipation	P I \| 100 \| mW
Isolation Voltage	V iso \| 5000 \| Vrms \| 2
Output Power Dissipation	P O \| 150 \| mW
Peak Forward Current	I FP \| 1 \| A \| 1
Reverse Voltage	V R \| 6 \| V
Total Power Dissipation	P tot \| 250 \| mW
Environment and package
Operating Temperature	T opr \| - 40 ~110 \| °C
Soldering Temperature	T sol \| 260 \| °C
Storage Temperature	T stg \| -55~125 \| °C

Documents

DatasheetDatasheet · 2.3 MB · 2026-09-23

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