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Technical parameters
| Power | |
|---|---|
| N管-ID最大漏极电流 | 23A |
| N管-Id额定电流 | 23A |
| N管-Vdss漏源电压 | 40V |
| N管-Vgsth门槛电压 | 3V |
| P管-ID最大漏极电流 | 16.5A |
| P管-Id额定电流 | 16.5A |
| P管-Vdss漏源电压 | 40V |
| AC and DC characteristics | |
| N管-Rds最大导通阻抗 | 21mΩ |
| P管-Rds最大导通阻抗 | 40mΩ |
| Environment and package | |
| 封装类型1 | TO252 |
| Other | |
| N管-Qg栅极电荷 | 14.3nC |
| N管-Qg栅极电荷typ | 14.3nC |
| N管-Vgs最大值 | 20V |
| Pd-功率耗散 | 21.4mW |
| Pd最大耗散功率 | 21.4mW |
| P管-Qg栅极电荷 | 20.1nC |
| P管-Qg栅极电荷typ | 20.1nC |
| P管-Vgs最大值 | 20V |
| 引脚数量1 | 5 |
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