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Technical parameters

Power
最大漏源电流Id11A
漏源击穿电压Vdss650V
AC and DC characteristics
最大漏源导通阻抗Ron150mΩ
Environment and package
封装类型1DFN
Other
引脚数量10
栅极电荷Qg2.2nC
输入电容Ciss70pF

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