HSCH-9161
RF DiodesIC DETECTOR DIODE GAAS 110GHZ BEAM LEAD
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View full reportTechnical parameters
| Power | |
|---|---|
| Burnout power | 20 dBm (Typ.) |
| Voltage sensitivity strength | 0.5 mV/μW (Min.) |
| Environment and package | |
| Operating temperature range | -65 °C (Min.) |
| Other | |
| Beam lead strength | 3 Grams (Max.) |
| Junction capacitance | 0.035 pF (Typ.) |
| Video resistance | 2.5 kΩ (Min.) |