Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 400V 2A DO214AA
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Technical parameters
Key specs
Reverse voltage400 V
Average rectified current2 A
Forward voltage1.3 VMax · 2 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 5 µA @ 400 V |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Other | |
| Base Product Number | HS2G |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 50 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |