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Technical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 11A |
| VDSS-最大漏源电压 | 800V |
| Vgs(th)-门槛电压 | 4V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 450mΩ |
| Environment and package | |
| 封装类型1 | TO252 |
| Other | |
| Ciss-输入等效电容 | 1142pF |
| Qg-栅极电荷 | 32nC |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 3 |