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Technical parameters

Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Voltage - Collector Emitter Breakdown (Max)120V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition100MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseSC-74A, SOT-753
Supplier Device PackageSMV
Other
Base Product NumberHN4A51
MfrToshiba Semiconductor and Storage
Product StatusActive
Series-
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA

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