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Technical parameters

Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)150mA
Power - Max100mW
Voltage - Collector Emitter Breakdown (Max)50V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition800MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6
Other
Base Product NumberHN2A01
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA

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