100V MOSFET
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage100 V
Continuous drain current11 A
Gate threshold voltage2.4 VMax
| Power | |
|---|---|
| Channel | N |
| Environment and package | |
| Package | SOIC-8 |
| Other | |
| Configuration | Single |
| ID | 11A |
| Product Family | 100V |
| Qg | 17nC |
| Qgd | 3nC |
| Qgs | 2.4nC |
| RDS(on) condition 2 | 13.5mΩ |
| RDS(on) condition 5 | 17.5mΩ |
| VDS | 100V |
| VGS(th) | 2.4V |