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Technical parameters
| Power | |
|---|---|
| VCBO-CB结击穿电压 | 18V |
| VCBO-集基级击穿电压 | 18V |
| VCEO-CE结击穿电压 | 12V |
| VCEO-集射级击穿电压 | 12V |
| VEBO-EB结击穿电压 | 6V |
| VEBO-射基级击穿电压 | 6V |
| AC and DC characteristics | |
| fT-变换频率 | 10MHZ |
| hFE-最小直流增益 | 70 |
| Hfe-最小直流增益 | 70 |
| Environment and package | |
| 封装类型1 | SOIC |
| Other | |
| 引脚数量1 | 14 |
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