MACOM Technology SolutionsUnited States
High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
All alternatives
View full reportTechnical parameters
| Gain(dB) | 11.5 |
| Max Frequency(MHz) | 4100 |
| Min Frequency(MHz) | 3700 |
High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
| Gain(dB) | 11.5 |
| Max Frequency(MHz) | 4100 |
| Min Frequency(MHz) | 3700 |