MACOM Technology SolutionsUnited States
High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz
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View full reportTechnical parameters
| Gain(dB) | 15.5 |
| Max Frequency(MHz) | 1880 |
| Min Frequency(MHz) | 1805 |
High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz
| Gain(dB) | 15.5 |
| Max Frequency(MHz) | 1880 |
| Min Frequency(MHz) | 1805 |