Goford SemiconductorTaiwan, China
GT300P15M
Transistors - FETs, MOSFETs - Single类型：P沟道@@漏源电压(Vdss)：-150V@@连续漏极电流(Id)：-90A@@阈值电压(Vgs(th))：-4V@@导通电阻(RDS(on)@Vgs：28mΩ@10V @@封装：TO-263
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage150 V
Continuous drain current90 A
On-resistance28 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 150V |
| 连续漏极电流(Id) | 90A |
| Other | |
| 导通电阻(RDS(on)) | 28mΩ@10V |
| 数量 | 1个P沟道 |