Microchip TechnologyUnited States
SI TVAR NON HERMETIC CHIP
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Technical parameters
| Power | |
|---|---|
| Voltage - Peak Reverse (Max) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~125°C |
| Package | Tray |
| Package / Case | Die |
| Supplier Device Package | Chip |
| Other | |
| Capacitance Ratio | 3.4 |
| Capacitance Ratio Condition | C0/C30 |
| Capacitance @ Vr, F | 1.2pF @ 4V, 1MHz |
| Diode Type | Single |
| Mfr | Microchip Technology |
| Product Status | Active |
| Q @ Vr, F | 3800 @ 4V, 50MHz |
| Series | - |
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