Goford SemiconductorTaiwan, China
MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-220F |
| Other | |
| Ciss (pF) | 768 |
| Compliance | RoHS,Halogen Free |
| Crss (pF) | 0.2 |
| ESD Diode | NO |
| Id (A) | 11 |
| Pd (W) | 31.3 |
| Qgd (nC) | 7 |
| Qg (nC) | 21 |
| Qgs (nC) | 4.5 |
| Rds(on) mΩ(max) @Vgs=10V | 360 |
| Rds(on) mΩ(typ) @Vgs=10V | 330 |
| Technology | SUPER JUNCTION |
| Type | N |
| Vds (V) | 700 |
| Vgs(th) max(V) | 4 |
| Vgs (V) | ±30 |