Goford SemiconductorTaiwan, China
MOSFET
All alternatives
View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-247 |
| Other | |
| Ciss (pF) | 2350 |
| Compliance | Automotive,RoHS,Halogen Free |
| Crss (pF) | 22 |
| ESD Diode | NO |
| Id (A) | 40 |
| Pd (W) | 299 |
| Qgd (nC) | 43 |
| Qg (nC) | 76 |
| Qgs (nC) | 21 |
| Rds(on) mΩ(max) @Vgs=10V | 85 |
| Rds(on) mΩ(typ) @Vgs=10V | 72 |
| Technology | SUPER JUNCTION |
| Type | N |
| Vds (V) | 650 |
| Vgs(th) max(V) | 4.6 |
| Vgs (V) | ±30 |