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Technical parameters

Key specs

Reverse voltage600 V
Average rectified current5.6 ~ 8 ATC=100°C,TA=40°C)
Forward voltage1 VMax · 8 A
TypeStandard

Datasheet-verified parameters

18 items
ParameterValue and test conditionsSource
Average rectified current8.0 A (R-load, TC=100°C, cooling fin 300 cm²); 5.6 A (R-load, free standing, TA=40°C)
Repetitive peak reverse voltage600 V
Max. alternating input voltage420 V
Forward voltage< 1.0 V
Peak forward surge current180 A (50 Hz, 10 ms); 200 A (60 Hz, 8.3 ms)
Repetitive peak forward current36 A (f > 15 Hz)
Junction/storage temperature-50...+150°C
Maximum junction temperature150°C
Rating for fusing162 A²s (t < 10 ms)
PackageGBU
TypeSingle Phase Diode Bridge Rectifier
GradeCommercial grade
RoHSCompliant (exemp. 7a)
REACHCompliant
UL recognitionFile E175067
Case material flammability ratingUL 94V-0
Solder conditions260°C/10s
Admissible mounting torque9 ± 10% lb.in. / 1 ± 10% Nm (M3)
All parameters (14)ExpandCollapse
Power
Current - Average Rectified (Io)5.6 A
Current - Reverse Leakage @ Vr5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If1 V @ 8 A
Voltage - Peak Reverse (Max)600 V
Environment and package
Mounting TypeThrough Hole
Operating Temperature-50°C~150°C(TJ)
PackageBox
Package / Case4-SIP, GBU
Supplier Device PackageGBU
Other
Diode TypeSingle Phase
MfrDiotec Semiconductor
Product StatusActive
Series-
TechnologyStandard

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