GeneSiC SemiconductorUnited States

GB100XCP12-227

ObsoleteTransistors - IGBTs - Modules

IGBT MODULE 1200V 100A SOT227

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Technical parameters

Power
Current - Collector Cutoff (Max)1 mA
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Environment and package
Mounting TypeChassis Mount
Operating Temperature-40°C~175°C(TJ)
PackageBulk
Package / CaseSOT-227-4
Supplier Device PackageSOT-227
Other
ConfigurationSingle
IGBT TypePT
InputStandard
Input Capacitance (Cies) @ Vce8.55 nF @ 25 V
MfrGeneSiC Semiconductor
NTC ThermistorNo
Product StatusObsolete
Series-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 100A

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