Goford SemiconductorTaiwan, China
P-40V,-70A,RD(MAX)<7M@-10V,VTH-1
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage40 V
Continuous drain current70 A
On-resistance7 mΩMax · 20A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 277W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6407 pF @ 20 V |
| Mfr | Goford Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
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