Global Power Technology-GPTUnited States
DIODE SIL CARBIDE 650V 14A 4DFN
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View full reportTechnical parameters
Key specs
Reverse voltage650 V
Average rectified current14 A
Forward voltage1.55 VMax · 4 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 14A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 4 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package | Cut Tape (CT) Tape & Box (TB) |
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-DFN (8x8) |
| Other | |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Mfr | Global Power Technology-GPT |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |