Global Power Technology-GPTUnited States
SIC SCHOTTKY DIODE 650V 8A 3-PIN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 14A (DC) |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
| Other | |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Global Power Technology-GPT |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
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