Goford SemiconductorTaiwan, China
MOSFET
All alternatives
View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOT-23 |
| Other | |
| Ciss (pF) | 1050 |
| Compliance | Automotive,RoHS,Halogen Free |
| Crss (pF) | 116 |
| ESD Diode | NO |
| Id (A) | -4 |
| Pd (W) | 1.4 |
| Qgd (nC) | 2.5 |
| Qg (nC) | 12 |
| Qgs (nC) | 1.9 |
| Rds(on) mΩ(max) @Vgs=2.5V | 45 |
| Rds(on) mΩ(max) @Vgs=4.5V | 35 |
| Rds(on) mΩ(typ) @Vgs=2.5V | 37 |
| Rds(on) mΩ(typ) @Vgs=4.5V | 29 |
| Technology | TRENCH |
| Type | P |
| Vds (V) | -20 |
| Vgs(th) max(V) | -1 |
| Vgs (V) | ±12 |