Goford SemiconductorTaiwan, China
类型：P沟道@@漏源电压(Vdss)：-20V@@连续漏极电流(Id)：-4.8A@@阈值电压(Vgs(th))：-0.45V@@导通电阻(RDS(on)@Vgs：35mΩ@4.5V 42mΩ@2.5V @@封装：SOT-23
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current4.8 A
On-resistance50 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 4.8A |
| Other | |
| 导通电阻(RDS(on)) | 50mΩ@4.5V,4A |
| 数量 | 1个P沟道 |