Goford SemiconductorTaiwan, China
MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | DFN5*6-8L |
| Other | |
| Ciss (pF) | 5595 |
| Compliance | Automotive,RoHS,Halogen Free |
| Crss (pF) | 659 |
| ESD Diode | NO |
| Id (A) | 100 |
| Pd (W) | 50 |
| Qgd (nC) | 13 |
| Qg (nC) | 38 |
| Qgs (nC) | 9 |
| Rds(on) mΩ(max) @Vgs=10V | 3.5 |
| Rds(on) mΩ(max) @Vgs=4.5V | 4.5 |
| Rds(on) mΩ(typ) @Vgs=10V | 2.5 |
| Rds(on) mΩ(typ) @Vgs=4.5V | 3.5 |
| Technology | TRENCH |
| Type | N |
| Vds (V) | 30 |
| Vgs(th) max(V) | 2.5 |
| Vgs (V) | ±20 |