Goford SemiconductorTaiwan, China
MOSFET N-CH 100V 2A SOT-23
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current2 A
On-resistance250 mΩMax · 2A
Gate threshold voltage3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.3W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 50 V |
| Mfr | Goford Semiconductor |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 2A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |