Goford SemiconductorTaiwan, China
G1002-B
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View full reportTechnical parameters
Key specs
Drain-source voltage90 V
Continuous drain current2 A
On-resistance260 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 90V |
| 连续漏极电流(Id) | 2A |
| Other | |
| 导通电阻(RDS(on)) | 260mΩ@4.5V |
| 耗散功率(Pd) | 1.3W |