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Technical parameters

Key specs

InterfaceSerial
Supply voltage2.7 ~ 3.65 V
Clock frequency20 MHzMax

Datasheet-verified parameters

21 items
ParameterValue and test conditionsSource
Memory TypeFerroelectric random access memory (F-RAM)
Capacity64-Kbit (8K × 8)
InterfaceSerial Peripheral Interface (SPI)
Supply VoltageMin: 2.7 V, Typ: 3.3 V, Max: 3.65 V
Clock FrequencyMax: 20 MHz
Package8-pin SOIC, 8-pin DFN
Operating Temperature-40 °C to +85 °C
GradeIndustrial
RoHSCompliant
Supply CurrentMax: 0.2 mA @ fSCK=1 MHz; Max: 3 mA @ fSCK=20 MHz
Standby CurrentTyp: 3 μA, Max: 6 μA
Input Leakage CurrentMax: ±1 μA
Output Leakage CurrentMax: ±1 μA
Input HIGH VoltageMin: 0.7 × VDD, Max: VDD + 0.3 V
Input LOW VoltageMin: -0.3 V, Max: 0.3 × VDD
Output HIGH VoltageMin: VDD - 0.8 V @ IOH=-2 mA
Output LOW VoltageMax: 0.4 V @ IOL=2 mA
Endurance100 trillion (10^14) read/writes
Data Retention151-year
Electrostatic Discharge VoltageCharged Device Model: 500 V
Latch-up Current> 140 mA
All parameters (9)ExpandCollapse
AC and DC characteristics
SCK FrequencyUp to 20 MHz
Environment and package
Ambient Temperature (TA)-40 °C to +85 °C
Package8-pin SOIC, 8-pin DFN
Other
Data Retention151-year
Endurance100 trillion (10^14) read/writes
InterfaceSPI
Memory Capacity64-Kbit
Organization8K × 8
VDD2.7 V to 3.65 V

Pinout and package

Figure 1. 8-pin SOIC pinout Fi…
Figure 1. 8-pin SOIC pinout Fi…
Package: 8-pin SOIC, 8-pin DFN
PinNameFunctionSource
1CS(Chip Select, active LOW)
2SO(Serial Output)
3WP(Write Protect, active LOW)
4VSS(Ground)
5SI(Serial Input)
6SCK(Serial Clock)
7HOLD(Hold, active LOW)
8VDD(Power Supply)

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