Fairchild SemiconductorUnited States
INSULATED GATE BIPOLAR TRANSISTO
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 268 W |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
| Other | |
| Gate Charge | 68 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mfr | Fairchild Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 101 ns |
| Series | - |
| Switching Energy | 1.22mJ (on), 440µJ (off) |
| Td (on/off) @ 25°C | 18ns/64ns |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.81V @ 15V, 40A |
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