VBsemi(微碧半导体)China

FDS6675B-VB

Transistors - FETs, MOSFETs - Single

1个P沟道 耐压:30V 电流:11.6A

Ask AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current11.6 A
Power
漏源电压(Vdss)30V
连续漏极电流(Id)11.6A
Other
数量1个P沟道

Documents

DatasheetDatasheet · 219.7 KB · 2026-09-21
Open document center