VBsemi(微碧半导体)China
FDP100N10-VB
Transistors - FETs, MOSFETs - SingleTO220；N—Channel沟道,100V；100A；RDS(ON)=9mΩ@VGS=10V,VGS=20V；Vth=2~4V；
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View full reportTechnical parameters
Key specs
Drain-source voltage100 V
Continuous drain current100 A
On-resistance9 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 100A |
| Other | |
| 导通电阻(RDS(on)) | 9mΩ@10V |
| 耗散功率(Pd) | 250W |