All alternatives

View full report

Technical parameters

Key specs

Reverse voltage200 V
Average rectified current3 A3 A (TT = 100°C)
Forward voltage900 mVMax · 3 A
TypeUltrafast recovery

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
Repetitive peak reverse voltage200 V
Max. average forward rectified current, R-load3 A (TT = 100°C)
Forward voltage drop< 0.9 V
TypeSuperfast Efficient SMD Rectifier Diode
PackageSMC ~ DO-214AB
Junction temperature-50...+150°C
GradeCommercial /industrial grade
RoHSCompliant to RoHS (exemp. 7a-I)
REACHCompliant to REACH
Surge peak reverse voltage200 V
Repetitive peak forward current15 A (f > 15 Hz)
Peak forward surge current115/125 A (Half sine-wave, 50 Hz/60 Hz)
Rating for fusing50 A²s (t < 10 ms)
Storage temperature-50...+150°C
Reverse recovery time< 20...35 ns
Maximum junction temperature150°C
All parameters (16)ExpandCollapse
Power
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If900 mV @ 3 A
Environment and package
Mounting TypeSurface Mount
Operating Temperature - Junction-50°C ~ 150°C
PackageTape & Reel (TR)
Package / CaseDO-214AB, SMC
Supplier Device PackageSMC (DO-214AB)
Other
Capacitance @ Vr, F-
MfrDiotec Semiconductor
Product StatusActive
Reverse Recovery Time (trr)25 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

Documents

Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.