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Mini-CircuitsUnited States

ERA-6SM+

ActiveRF AmplifiersMicro-X

IC RF AMP CELLULAR 0HZ-4GHZ 4SMD

Mini-Circuits ERA-6SM+ is a DC-4 GHz wideband RF amplifier using InGaP HBT technology and Darlington configuration, in Micro-X (WW107) package, operating from -45°C to 85°C, with transient protection and RoHS complianceChecked against the datasheet

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Technical parameters

Datasheet-verified parameters

17 items
ParameterValue and test conditionsSource
PackageMicro-X (WW107)
Operating Temperature-45°C to 85°C
RoHSCompliant
Frequency RangeDC-4 GHz
Storage Temperature-65°C to 150°C
Operating Current85mA
Power Dissipation451mW
Input Power20dBm
TechnologyInGaP HBT
ConfigurationDarlington
MTTF350 years at 85°C case temperature
Transient ProtectionYes
StabilityUnconditionally Stable
Impedance MatchingInternally Matched to 50 Ohms
SupplySingle Voltage Supply
Aqueous WashableYes
Moisture Sensitivity LevelLevel 1
All parameters (15)ExpandCollapse
Power
Current - Supply70mA
Voltage - Supply4.7V ~ 5.3V
AC and DC characteristics
Frequency0Hz ~ 4GHz
Gain10.8dB
Noise Figure4.7dB
Test Frequency1GHz
Environment and package
Mounting TypeSurface Mount
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case4-SMD, Gull Wing
Supplier Device Package-
Other
MfrMini-Circuits
P1dB17.2dBm
Product StatusActive
RF TypeCellular, CATV, DBS, PCS, WLAN
Series-

Pinout and package

PackageMicro-X (WW107)

PinNameFunctionSource
1RFinput. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
2Ground. Use via holes to reduce ground path inductance for best performance.
3RFoutput and DC input. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection.
4Ground. Use via holes to reduce ground path inductance for best performance.

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