SIMPLIFIED SCHEMATIC AND PIN D…

SIMPLIFIED SCHEMATIC AND PIN D…

Mini-CircuitsUnited States

ERA-2SM

RF AmplifiersMicro-X

AMP RF 16.4dB 3.4V DC-6GHz SMD

Mini-Circuits ERA-2SM+ is a DC-6 GHz wideband RF amplifier in a Micro-X package, internally matched to 50 Ohms, with transient protection and RoHS compliance.Checked against the datasheet

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Technical parameters

Datasheet-verified parameters

14 items
ParameterValue and test conditionsSource
PackageMicro-X
Operating Temperature-45°C to +85°C
RoHSCompliant
Frequency RangeDC-6 GHz
Storage Temperature-65°C to +150°C
Operating Current75 mA
Power Dissipation330 mW
Input Power+15 dBm
Input Impedance50 Ohms (Internally Matched)
TechnologyInGaP HBT
ConfigurationDarlington
Transient ProtectionYes
StabilityUnconditionally Stable
MTTF8,000 years at 85°C case temperature
All parameters (8)ExpandCollapse
Power
Device Operating Voltage+3.4 V (Typ)
Output Power @ 1 dB Compression+13.1 dBm (Typ) @ 0.1 GHz
Recommended Device Operating Current40 mA (Typ)
AC and DC characteristics
Frequency RangeDC to 6 GHz
Gain16.4 dB (Typ) @ 0.01 GHz
Noise Figure3.2 dB (Typ) @ 0.1 GHz
Environment and package
Operating Temperature-45°C to +85°C
PackageMicro-X

Pinout and package

SIMPLIFIED SCHEMATIC AND PIN D…
SIMPLIFIED SCHEMATIC AND PIN D…
Package: Micro-X
PinNameFunctionSource
1RFinput pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
2Connections to ground. Use via holes as shown in 'Suggested Layout for PCB Design' to reduce ground path inductance for best performance.
3RFoutput and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in 'Recommended Application Circuit'.
4Connections to ground. Use via holes as shown in 'Suggested Layout for PCB Design' to reduce ground path inductance for best performance.

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DatasheetDatasheet · 413.2 KB · 2026-11-09
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